Crossbar, Inc.

Crossbar

Company type	Private
Industry	Technology, Semiconductor, Computer memory
Founded	2010 (2010)
Founder	George Minassian, Hagop Nazarian, Wei Lu
Headquarters	Santa Clara , United States
Area served	Original equipment manufacturers (OEMs), system-on-chip (SoC) developers, consumer electronics, enterprise systems, mobile devices, industrial applications, Internet of Things (IoT)
Products	Non-volatile resistive random-access memory (RRAM) solutions

Crossbar is a technology firm located in Santa Clara, California, specializing in the development of non-volatile resistive random-access memory (RRAM) solutions.

History

Established in 2010 by George Minassian, Hagop Nazarian, and Wei Lu, Crossbar acquired licensing rights for RRAM patents from the University of Michigan via its Technology Transfer program. The enterprise proceeded to file its own patents aimed at the commercialization and production of RRAM technology.

In August 2013, Crossbar revealed itself publicly after operating in stealth mode, introducing a memory array produced within a commercial semiconductor fabrication facility. This product offered advantages such as enhanced write speeds, reduced power usage, improved durability, and a die size half that of traditional NAND flash memory. Its compatibility with CMOS processes enables manufacturing without the need for specialized fabrication equipment.

Crossbar raised $25 million in 2012 from investors including Artiman Ventures, Kleiner Perkins Caufield and Byers, Northern Light Venture Capital, and Michigan’s MINTS program. A later funding round in 2015 brought in an additional $35 million, attracting investors from China and Hong Kong.

The company focuses on serving original equipment manufacturers (OEMs) and system-on-chip (SoC) developers across sectors such as consumer electronics, enterprise systems, mobile devices, industrial applications, and the Internet of Things (IoT).

Products

In 2013, Crossbar set an objective to produce a terabyte of storage capacity within a single RRAM integrated circuit compatible with conventional CMOS semiconductor fabrication methods. That same year, it demonstrated a prototype achieving this capacity on a 200mm² chip. The technology utilizes a crosspoint array architecture to stack several silver-ion-based memory layers; the prototype incorporated three layers. This design targets delivering scalable, high-density memory suitable for mobile devices and other applications.

See also

• 3D XPoint