Guohan Hu
Guohan Hu | |
|---|---|
| Alma mater | Cornell University (PhD, 2002) |
| Occupation | Electrical engineer |
| Employer | IBM Research Thomas J. Watson Research Center |
| Known for | Expertise in magnetic storage and spintronics, spin-transfer torque mechanisms in MRAM |
| Title | Distinguished research staff member; leader of MRAM Materials and Devices team |
| Awards | IEEE Fellow (2022), Fellow of the American Physical Society (2023) |
Guohan Hu is an electrical engineer with expertise in magnetic storage and spintronics, focusing primarily on spin-transfer torque mechanisms used in magnetoresistive RAM, a type of non-volatile random-access memory. She holds the position of distinguished research staff member and leads the MRAM Materials and Devices team at IBM Research's Thomas J. Watson Research Center.
Dr. Hu completed her doctoral studies at Cornell University in 2002. In recognition of her significant work on Spin-Transfer-Torque MRAM materials and devices, she was honored as an IEEE Fellow in 2022. The following year, she was also named a Fellow of the American Physical Society for her innovative contributions that have greatly enhanced the efficiency, scalability, and dependability of advanced non-volatile memory technologies.