Sandip Tiwari
Sandip Tiwari | |
|---|---|
| Born | Ahmedabad, India |
| Alma mater | Indian Institute of Technology Kanpur, Rensselaer Polytechnic Institute, Cornell University |
| Occupation(s) | Electrical engineer, applied physicist, professor |
| Employer(s) | Cornell University, IBM T. J. Watson Research Center |
| Known for | SiGe transistor development, nanocrystal memory technology |
| Title | Charles N. Mellowes Professor of Engineering at Cornell University |
| Awards | IEEE Cledo Brunetti Award (2007), Distinguished Alumni Award from IIT Kanpur (2003), Young Scientist Award at ISCS (1991), Fellow of the American Physical Society (since 1998), Life Fellow of IEEE (1994) |
Sandip Tiwari is an electrical engineer and applied physicist originally from India, holding the position of Charles N. Mellowes Professor of Engineering at Cornell University. His previous roles include leading the National Nanotechnology Users Network and the National Nanotechnology Infrastructure Network as Director, alongside his tenure as a research scientist at the IBM T. J. Watson Research Center. He is widely recognized for his groundbreaking contributions to SiGe transistor development and nanocrystal memory technology.
Early life and education
Tiwari was born in Ahmedabad, India, and completed his Bachelor of Technology at the Indian Institute of Technology, Kanpur in 1976. He then pursued a Master of Engineering at Rensselaer Polytechnic Institute and earned his doctorate from Cornell University in 1980.
Work and academic career
Starting his research journey at IBM Research Division, Tiwari worked there until 1999. During this period, he played a key role in the creation of the first SiGe transistor and contributed significantly to advancements in compound semiconductor transistors.[1][2] He was also a pioneer in the fields of quantum devices and nanoscale technologies, notably developing nanocrystal memory.[3] The introduction of the SiGe transistor earned recognition as the IEEE IEDM Top Industry Innovation in 1987. Additionally, his research on nanocrystal memory is among the fifty most frequently cited articles in the history of Applied Physics Letters.
At Cornell University, Tiwari leads the Nanoscale ElectroScience Research Group, which concentrates on areas such as adaptive low-power circuit design,[4] three-dimensional integration,[5][6] approximate computing,[7] as well as Bayesian computational methods.[8][9]
Selected awards and honors
- IEEE Cledo Brunetti Award, 2007
- Distinguished Alumni Award from IIT Kanpur, 2003
- Young Scientist Award at the International Symposium on Compound Semiconductors (ISCS), 1991
- Founding Editor-in-Chief of IEEE Transactions on Nanotechnology, 2002
- Guest Editor for Proceedings of the IEEE, 2015
- Fellow of the American Physical Society, since 1998
- Life Fellow status granted by IEEE in 1994
Books
- S. Tiwari, Quantum, Statistical and Information Mechanics: A Unified Introduction, Electroscience series, Vol. 1, Oxford University Press
- S. Tiwari, Device Physics: Fundamentals of Electronics and Optoelectronics, Electroscience series, Vol. 2, Oxford University Press, (2022)
- S. Tiwari, Semiconductor Physics: Principles, Theory and Nanoscale, Electroscience series, Vol. 3, Oxford University Press, (2020)
- S. Tiwari, Nanoscale Device Physics: Science and Engineering Fundamentals, Electroscience series, Vol. 4, Oxford University Press, (2017)
- S. Tiwari, Compound Semiconductor Device Physics, Academic Press (1992) and Elsevier; a revised edition is accessible as an Open Text on the group’s website
Papers
- S. Tiwari, "Implications of Scales in Processing of Information," Proceedings of the IEEE, vol. 103, no. 8, pp. 1250–1273 (2015)
- S. Tiwari et al., "A silicon nanocrystals based memory," Applied Physics Letters, vol. 68, no. 10, pp. 1377–1379 (1996)
- S. Tiwari, "A new effect at high currents in heterostructure bipolar transistors," IEEE Electron Device Letters, vol. 9, no. 3, pp. 142–144 (1988)
References
- ↑ S.S. Iyer, G.L. Patton, S.S. Delage, S. Tiwari, J.M.C. Stork, "Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy", International Electron Devices Meeting (1987).
- ↑ G.L. Patton et al., “Silicon-Germanium Base Heterojunction Bipolar Transistors,” IEEE Electron Device Letters, 1988
- ↑ S. Tiwari et al., “A Silicon Nano-Crystals Based Memory,” Applied Physics Letters, 1996
- ↑ J. Y. Kim et al., “Adaptive Circuit Design Using Independently Biased Back-Gated Double-Gate MOSFETS,” IEEE Circuits and Systems I, 2012
- ↑ L. Xue et al., “Three-Dimensional Integration: Technology, Use, and Issues for Mixed-Signal Applications,” IEEE Transactions on Electron Devices, 2003
- ↑ C. C. Liu et al., “Bridging the Processor-Memory Performance Gap with 3D IC Technology,” IEEE Design and Test of Computers, 2005
- ↑ J. Y. Kim and S. Tiwari, “Inexact Computing using Probabilistic Circuits,” ACM Journal of Emerging Technologies, 2014
- ↑ S. Tiwari and D. Querlioz, “On the physical underpinnings of the unusual effectiveness of probabilistic and neural computation,” IEEE Int’l Conf. on Rebooting Computing, 2017
- ↑ IEEE Rebooting Computing 2017 presentation
- Living people
- Fellows of the IEEE
- Fellows of the American Physical Society
- Cornell University College of Engineering faculty
- IIT Kanpur alumni
- IBM Research computer scientists
- Cornell University College of Engineering alumni
- Indian electrical engineers
- Indian physicists
- Rensselaer Polytechnic Institute alumni